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Non-Volatile Memory Devices Characterization

应用文章

The recent rise in demand for smartphone technology has increased the demands on non-volatile memory (NVM) devices and the IoT continues to expand the application area of NVM. The flash memory is currently the mainstream for the storage device, but extensive research is underway with the next generation of NVMs such as ReRAM, PRAM etc., looking at expanding applications for lower power storage, storage class memory and the replacement of conventional volatile memory through the improvement of speed, performance, power consumption, reliability, and cost.

The CX3300 Device Current Waveform Analyzer, with its unique ultra-wideband low current sensing technology, allows you to quickly and interactively visualize a current waveform faster than μs and lower than μA. These are capabilities that are required in order to study a device’s behavior and impedance changing mechanisms. The CX3300 supports the current sensors covering a wide range from 100 pAlevel to 100 A with 1 GSa/s sampling rate, up to 200 MHz bandwidth, 14/16-bit dynamic range and up to 256 Mpts memory depth on a 2 channel or 4 channel mainframes. The powerful dynamic current measurement capabilities enable you to analyze and debug the NVM device characteristics. This application note explains how to perform the measurement for NVM devices.

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