技术资料
The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using WPTC’s MMICB process which features an MBE epitaxial layer, backside ground vias, and FET gate lengths of approximately 0.4 µm. The variable resistive elements of the HMMC-1002 are two 750 µm wide series FETs and four 200 µm wide shunt FETs. The distributed topology of the HMMC-1002 minimizes the parasitic effects of its series and shunt FETs, allowing the HMMC‑1002 to exhibit a wide dynamic range across its full bandwidth. An on-chip DC reference circuit may be used to maintain optimum VSWR for any attenuation setting or to improve the attenuation versus voltage linearity of the attenuator circuit.
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