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E4727A 先进低频噪声分析仪能够对各类器件进行快速、精确和可重复的低频噪声(LFN)测量。现在,它与 Keysight WaferPro Express 软件紧密结合,使器件建模和表征工程师不仅能够使用已有的丰富功能(包括高速直流、电容和射频 S 参数测量,以及同时进行自动化晶圆探头台控制),还能够使用新增的噪声测量。
其应用范围非常广泛,下面列出部分重要应用。
先进低频噪声分析仪内置的测量例程可一站式执行直流和噪声测量。例如,在测量 N 型 MOSFET 时,系统会自动选择最有利于显露器件固有噪声的电源阻抗和负载阻抗。工程师既可以采取这些建议的设置,也可以对其做出更改,然后启动噪声测量。随后,先进低频噪声分析仪对噪声功率谱密度(1/f 噪声)和时域中的噪声(RTN)进行测量。得到的数据在多图数据显示窗口中绘制成图。多个不同的窗口选项卡方便用户执行常见任务,例如评测器件直流工作点和测量功率频谱密度曲线的斜率。用户也可使用器件建模工具—例如 Keysight Model Builder Program(MBP)和 IC-CAP —通过器件模型来分析和显示噪声数据。电路设计人员可以利用这些器件模型来确保高度精确的射频和模拟低噪声电路设计。
E4727E3 可以结合使用 B1500A 半导体器件分析仪和 B1530A 波形发生器/快速测量单元(WGFMU),自动对晶圆执行经济高效的 RTN 测量。它能够提升 RTN 测量和数据分析的效率,包括晶圆探头控制。
图 1. A-LFNA 与 WGFMU 的比较,使用器件为:JFET,偏置:Ids=300p/1n/2n/7n/100n/1µA,Vds=50mV。