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    • E4727A 先进低频噪声分析仪 [已淘汰]

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    E4727A 先进低频噪声分析仪

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    HIGHLIGHTS

    • 先进低频噪声分析仪与 WaferPro Express 结合使用,可以实现完整的噪声测量,以及直流特征、电容和射频 S 参数的测量。
    • 优异的噪声灵敏度(-183 dBV2/Hz),可以实现高电压(±200 V)和超低频率(0.03 Hz)下的噪声测量。
    • 软件模块测量直流特征、1/f 噪声和随机电报噪声,并执行数据分析。
    • 是德科技与 Cascade Microtech 紧密合作,提供完全整合的晶圆上解决方案。该解决方案能够自动控制所有主流的晶圆探测系统。

    E4727A 先进低频噪声分析仪能够对各类器件进行快速、精确和可重复的低频噪声(LFN)测量。现在,它与 Keysight WaferPro Express 软件紧密结合,使器件建模和表征工程师不仅能够使用已有的丰富功能(包括高速直流、电容和射频 S 参数测量,以及同时进行自动化晶圆探头台控制),还能够使用新增的噪声测量。

     

    应用

    其应用范围非常广泛,下面列出部分重要应用。

    • 制程设计套件(PDK)开发 - 半导体器件工厂支持无厂设计中心设计各种元器件,例如手机收发信机、频率合成器、模数转换器等。为了这一目标,工厂必须提供包含半导体器件仿真模型的制程设计套件(PDK)。仿真模型必须跨越所有可能的偏置电流、温度和几何形状,捕获晶体管(BJT、CMOS 等)和电阻器上的噪声效应
    • 制造统计过程控制 - 例如,GaN 器件的制造商可以在其晶圆上使用噪声测量,作为早期指标表征器件可靠性。表现出较大噪声的器件,很可能更快出现故障。相比标准加速寿命测试,我们现在有了一种无损评测可靠性的方法。此外,对于噪声是关键参数之一的电流应用,可以使用晶圆级测量来跟踪噪声性能在几天、几周和几个月制造周期内的变化
    • IC 噪声技术指标 - 运算放大器和线性电压调节器的集成电路制造商通常需要表征输出电压噪声,这在他们的技术资料中是一个关键技术指标。一个晶圆可能包含 20,000 个这样的电路。为了有效测量和勘察整个晶圆(甚至是许多个晶圆)上的电路性能,必须使探头和信号调理电路尽量靠近被测器件,以改善接地性能,最大限度减少外部噪声的影响。A-LFNA 独有的模块化设计使得连接探头夹具的电缆长度大大缩短,由此扩宽了测量的频率范围

    完整的测量

    先进低频噪声分析仪内置的测量例程可一站式执行直流和噪声测量。例如,在测量 N 型 MOSFET 时,系统会自动选择最有利于显露器件固有噪声的电源阻抗和负载阻抗。工程师既可以采取这些建议的设置,也可以对其做出更改,然后启动噪声测量。随后,先进低频噪声分析仪对噪声功率谱密度(1/f 噪声)和时域中的噪声(RTN)进行测量。得到的数据在多图数据显示窗口中绘制成图。多个不同的窗口选项卡方便用户执行常见任务,例如评测器件直流工作点和测量功率频谱密度曲线的斜率。用户也可使用器件建模工具—例如 Keysight Model Builder Program(MBP)和 IC-CAP —通过器件模型来分析和显示噪声数据。电路设计人员可以利用这些器件模型来确保高度精确的射频和模拟低噪声电路设计。

    使用 E4727E3 和 B1500A 的自动 RTN 解决方案

    E4727E3 可以结合使用 B1500A 半导体器件分析仪和 B1530A 波形发生器/快速测量单元(WGFMU),自动对晶圆执行经济高效的 RTN 测量。它能够提升 RTN 测量和数据分析的效率,包括晶圆探头控制。

    主要特性

    • 自动执行 RTN 和 1/f 噪声测量和数据分析
    • 晶圆映射
    • 多重数据叠加显示
    • 系统本底噪声显示和数据剪裁
    RTN 和 1/f 噪声测量系统比较
        E4727A
    A-LFNA
     
    E4727A
    A-LFNA
     
    E4727E3
    用于 B1500A 的
    自动
    RTN 软件
     
    测量软件   E4727P3
    A-LFNA 测量和
    编程软件套件
    E4727P3
    A-LFNA 测量和
    编程软件套件
    E4727E3
    WGFMU 测量
    软件套件
    许可证类型   浮动 浮动 节点锁定
    支持的仪器   E4727A A-LFNA 包含B1530A WGFMU
    (可选)的
    B1500A
    包含 B1530A WGFMU 的
    B1500A
    目标器件   FET、BJT、二极管、电阻器、电路 FET FET
    器件端子数   3、4、5、6 3 3
    最大偏置电压   +/-200 V +/-10 V +/-10 V
    最大偏置电流   +/-100 mA +/-10 mA +/-10 mA
    用于 FET 的偏置模式   SetVg、SetId、SetOD、
    SetODvdlin
    SetVg、SetId、SetOD、
    SetODvdlin
    SetVg、SetId、SetOD、
    SetODvdlin
    本底噪声   2E-27 A2/Hz 1E-25 A2/Hz 1E-25 A2/Hz
    模拟频率带宽   30 m – 40 MHz 1 m – 16 MHz 1 m – 16 MHz
    频域测量 最低频率 30 mHz 1 mHz 1 mHz
      最高频率 40 MHz 16 MHz 16 MHz
    时域测量 最高采样频率 400 MHz 200 MHz 200 MHz
      最小采样间隔 2.5 nsec 5 nsec 5 nsec
      最大采样数 224=16,777,216 221=2,097,152 221=2,097,152
    控制器 PC   M9036A
    PXIe 嵌入式控制器
    M9036A
    PXIe 嵌入式控制器
    Windows PC
    GPIB 接口   M9036A
    内置 GPIB 接口
    (Micro-D 25 引脚)
    M9036A
    内置 GPIB 接口
    (Micro-D 25 引脚)
    USB GPIB 接口
    (Keysight 82357B、
    NI GPIB-USB-HS)

    A-LFNA 与 WGFMU 的比较

    A-LFNA - WGFMU

    图 1. A-LFNA 与 WGFMU 的比较,使用器件为:JFET,偏置:Ids=300p/1n/2n/7n/100n/1µA,Vds=50mV。

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