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W8533EP IC-CAP Angelov-GaN 提取套件为氮化镓(GaN)器件提供完整的建模解决方案。由于吸收和热效应会对器件的电气特性造成影响,因此要建立 GaN 器件的模型存在一定的挑战性。对于这种类型的器件,砷化镓(GaAs)模型通常不够准确,因而查尔姆斯理工大学 I. Angelov 教授开发的 Angelov-GaN 模型迅速成为了行业标准的解决方案。
该套件是他与行业合作伙伴合作开发的成果,并且已经在实际的 GaN 工艺上进行了验证。它提供专用的软件环境,支持用户执行必要的测量并提取 Angelov-GaN 模型。它支持典型的直流分析仪和网络分析仪执行直流和 S 参数测量以及去嵌入操作。它具有操作方便的用户界面,使用户可以分步提取模型参数。套件中提供了完整的操作流程并允许完全自定义。用户可以在是德科技先进设计系统(ADS)中使用公开的 Verilog-A 版本 Angelov-GaN 模型进行仿真。
图 1. 测量模块支持轻松设置并运行直流和射频测量
图 2. Angelov-GaN 套件的提取流程
图 3. 数据显示窗口对测量数据和仿真数据进行比较
运行 Angelov-GaN 提取套件需要 Keysight W8501EP/ET IC-CAP 环境、W8502EP/ET IC-CAP 仿真和分析软件以及 W8520EP/ET IC-CAP 仪器连通性软件。