3rd Order 1900MHz Low Noise Amplifier using Infineon Transistor
应用文章
Introduction
This application note is based directly on a design documented in the Infineon Technologies Application Note 060. This design was used as part of the accuracy verification suite used in the development of the HARBEC nonlinear simulator in GENESYS 7.5. This detailed application information is provided in support of the “SiGe BFP620 Amp” example shipped with the software. Not only does it show the accuracy of GENESYS, it also provides some good design techniques for use in other circuits.
Description
Infineon’s BFP620 is a high-performance, lowcost Silicon-Germanium bipolar transistor fabricated with Infineon’s B7HF SiGe process. Housed in a 4-lead ultra-miniature SOT-343 surface mount package and with a 70 GHz transition frequency (fT), this device is ideal for high performance applications including Low Noise Amplifiers in portable telephones and other battery operated wireless communications devices. The BFP620 offers exceptionally low noise figure, high gain and high linearity at low power consumption levels. The BFP620 rivals