这是您想要的页面. 查看搜索结果:

IC-CAP 支持下列场效应晶体管（FET）模型。

产品型号 模型 产品描述
W8530EP Keysight EEFET3、Keysight EEHEMT1、Curtice Cubic 和 Quadratic、Raytheon Statz 针对所支持模型的完整测量和提取程序。
W8532EP Keysight Root FET、MOS 和二极管 用于直流和射频 3 端子应用的自动建模程序，在器件的整个工作范围内使用 S 参数和直流数据阵列进行内插样条拟合。本许可证还包括针对 Keysight Root 二极管和 MOS 模型的提取功能。
W8533EP Angelov-GaN 用于 Angelov-GaN 模型的精确一键式测量和提取解决方案

关于 IC-CAP 器件建模软件的更多信息，请访问 IC-CAP 器件建模软件。

保护您的创新投资

Featured Resources for FET 建模

Configuration Guides 2023.11.14

PathWave Device Modeling (IC-CAP) Configuration

PathWave Device Modeling (IC-CAP) Configuration

PathWave Device Modeling (IC-CAP) bundled software configurations with simplified licensing and support options.

2023.11.14

Technical Overviews 2023.11.28

PathWave Device Modeling

PathWave Device Modeling

IC-CAP is a widely used software in the semiconductor industry for modeling DC, analog, and RF devices. It extracts precise models and sub-circuits for various applications such as high-speed/digital, analog, power electronics, and power RF. IC-CAP provides a cutting-edge modeling tool that caters to a wide range of needs, including automated instrument control, data acquisition, parameter extraction, graphical analysis, simulation, optimization, and statistical analysis. The software offers a flexible, automated, and user-friendly environment to extract devices and circuits efficiently.

2023.11.28

查看所有资源

查看所有资源

需要帮助或遇到问题？

联系我们