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Direct Power MOSFET Capacitance Measurement at 3000 V

Direct Power MOSFET Capacitance Measurement at 3000 V

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Introduction

The input, output and reverse transfer capacitance of power MOSFETS (Ciss, Coss and Crss respectively) are critical device parameters for switching applications. Unfortunately, the DC voltages applied to power MOSFETs during many switching applications are in the hundreds or even thousands of volts; this has made the measurement of these parameters under specified DC bias voltage conditions impossible using conventional capacitance meters. Therefore, many elaborate schemes have been developed to measure these parameters using a variety of homemade test setups that usually involve measuring a device’s step response and extracting the value of capacitance from the resulting RC time constant. The Keysight Technologies, Inc. B1505A Power Device Analyzer/Curve Tracer supports a high-voltage source/monitor unit (HVSMU), a multi-frequency capacitance measurement unit (MFCMU) and a high-voltage bias-T that permit direct measurement of high-power MOSFET capacitance measurement.

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