GaN Current Collapse Effect Evaluation Using the B1505A
应用文章
A Fully Integrated, Off-the-shelf GaN Current Collapse Solution
In GaN devices, the current collapse effect, which is believed to be caused by electron trapping and detrapping, appears as a transient and recoverable reduction in drain current after applying high voltage. Since the current collapse effect limits the performance and reliability of GaN devices, it is an area of research that is receiving intense interest. Unfortunately, obtaining a detailed understanding of the current collapse effect has been difficult to date since no available equipment incorporated all of the capabilities listed below. This document outlines how Keysight Technologies, Inc. B1505A with the N1267A High Voltage Source Monitor Unit / High Current Source Monitor Unit Fast Switch can be used to solve GaN's current collapse measurement challenges.