RF GaN Model Extraction Solution in PathWave Device Modeling (IC-CAP)
应用文章
GaN(Gallium-Nitride) technology is one of the fastest growing subsegment in the RF industry. Especially with the development of 5G communications, GaN technology is broadly accepted and continues to advance due to its highfrequency and high-power handling capability.
To address the increasing need for accurate RF GaN models, the industry and universities are continuously enhancing the current empirical models as well as developing new models including physics- and ANN-based (Artificial Neural Network) models. In 2018, after many years of development and evaluation, two new physics-based models (ASM-HEMT and MSVG) were accepted as industrystandards by the CMC (Compact Model Coalition).