Scanning Microwave Microscopy for Quantitative Semiconductor Device Characterization
应用文章
Introduction
The scanning microwave microscope (SMM) merges the nanoscale imaging capabilities of an atomic force microscope (AFM) with the high-frequency broadband (from MHz to GHz) impedance measurement accuracy of a vector network analyzer (VNA) (see Figure 1). The typical frequency range of the combined SMM is between 1 - 20 GHz [1]. It allows characterizing electric and magnetic properties of materials at microwave frequencies with nanometer lateral resolution. Using the microwave signal, impedance nanoscale imaging and doping profiling of the ‘device under test’ (DUT) can be performed. Typically, the SMM is operated in reflection mode, whereby the ratio of the reflected and incident electromagnetic waves, the so called S11 scattering parameter, is measured by the VNA at each pixel of the AFM tip-sample contact point. As such a microwave image is generated pixel by pixel, simultaneously to the topographical image of the DUT. Imaging speeds are relatively fast, resulting in a typical acquisition time of 2 minute per image with 256 x 256 pixels.
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