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The W7025E PathWave IC-CAP BSIM4 Model Extraction Package provides measurement and extraction procedures for the BSIM4 industry-standard model for MOSFET devices.
Highlights
The W7025E PathWave IC-CAP BSIM4 Model Extraction Package includes:
- DC, CV, and RF extraction for BSIM3v3.3, including high-frequency effects
- Robust, direct extraction procedures find the best initial values for optimizers, thereby removing the need for excessive optimization and tuning steps
- Flexible, customizable extraction flow
- Windows-style data visualization, optimization and tuning
- Shared user interface environment with other extraction CMOS extraction products
- Target and Corner Modeling
- Binning model support
The BSIM4 model addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robust, and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. The model is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley.
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